The Effect of Stacking Fault Energy on Texture Transformation in Thin Metal Films

Abstract

Texture transformations in Cu were characterized via XRD. Previous studies have shown that minimization of nanotwin boundaries provides the driving force for texture transformations in Ag thin films. Due to the larger stacking fault energy of Cu, it was expected that Cu films would have fewer nanotwins and, therefore, less transformation. Cu was deposited onto five silicon substrates via e-beam physical vapor deposition. Samples were annealed at either 200°C or 400°C for 2-6 hours. Texture was characterized via XRD before and after annealing. Results show no transformation in any of the samples studied.