The Effect of Stacking Fault Energy on Texture Transformation in Thin Metal Films

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dc.contributor.authorPhillips, Heather
dc.contributor.authorTang, Yan
dc.contributor.authorHoffman, Brandon
dc.date.accessioned2017-04-01T18:50:15Z
dc.date.available2017-04-01T18:50:15Z
dc.date.issued2017-04-01
dc.description.abstractTexture transformations in Cu were characterized via XRD. Previous studies have shown that minimization of nanotwin boundaries provides the driving force for texture transformations in Ag thin films. Due to the larger stacking fault energy of Cu, it was expected that Cu films would have fewer nanotwins and, therefore, less transformation. Cu was deposited onto five silicon substrates via e-beam physical vapor deposition. Samples were annealed at either 200°C or 400°C for 2-6 hours. Texture was characterized via XRD before and after annealing. Results show no transformation in any of the samples studied.
dc.description.statementofresponsibilityXXXVI Annual Rochester Symposium for Physics Students, University of Rochester, Rochester, NY., April 1, 2017.
dc.identifier.urihttps://dspace.houghton.edu/handle/hc/3643
dc.publisherHoughton College
dc.rightsAuthors retain the copyright for all content posted in this repository. This material may not be published, reproduced, broadcast, rewritten, or redistributed beyond the Houghton College community without permission except in accordance with fair use doctrine.
dc.subjectStudent Projects
dc.titleThe Effect of Stacking Fault Energy on Texture Transformation in Thin Metal Films
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